Regions of anomalous recombination in surface-barrier structures

Properties of abnormal recombination in structures based on indium antimonide are studied using a method of low-signal photo-emf and the metal-graphic method. Dome-like defects of the lattice are found, their concentration depends on conditions of elctrochemical oxidation, thermal annealing, irradiation by high-energy protons, these defects consisting of nucleus and periphery. A comparison of characteristics of shown defects and regions of defect accumulation in irradiated semiconductors indicate the generality of their properties. It is supposed that abnormal recombination centres are the structural complexes containing vacancy and oxygen ion and positioning in nuclei of dome-like defects. A characteristic peculiarity of these complexes is the asymmetry of their cross sections of carrier capture and temperature dependence of electron capture cross sections with activation energy of 0.04-0.07 eV caused by equilibrium filling of complex states with elctrons