Thermal hysteresis in the dielectric response of the charge density wave system o-TaS3
- 1. Institute of Physics, HR-10001 Zagreb, POB 304 (Croatia)
- 2. Experimental Physics V, Center for Electronic Correlations and Magnetism, University of Augsburg, D-86135 Augsburg (Germany)
Description
The low frequency dielectric response of the charge density wave (CDW) system o-TaS3 exhibits a rate-independent hysteresis on temperature cycling in a very wide temperature range below the CDW transition temperature. The ac conductivity, related to the CDW dynamics, is higher on heating than on cooling, while the dc conductivity of residual free carriers is lower, indicating a nontrivial relation between the two of them. Both the amplitude and the relaxation time of the low frequency relaxation process observed in the temperature region of the hysteresis are higher on heating, with similar temperature dependence to the hysteresis in the dc resistivity. The results indicate that the hystereses in ac and dc conductivities are mainly coupled through the free carrier screening of the CDW phase and not through the conversion of free carriers into phase defects.
Availability note (English)
Available from http://dx.doi.org/10.1088/0953-8984/20/44/445231Additional details
Identifiers
- DOI
- 10.1088/0953-8984/20/44/445231;
- PII
- S0953-8984(08)79076-3;
Publishing Information
- Journal Title
- Journal of Physics. Condensed Matter
- Journal Volume
- 20
- Journal Issue
- 44
- Journal Page Range
- [6 p.]
- ISSN
- 0953-8984
- CODEN
- JCOMEL
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 41008373
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- AMPLITUDES; CARRIERS; CHARGE DENSITY; CONVERSION; CRYSTAL DEFECTS; DIELECTRIC MATERIALS; ELECTRIC CONDUCTIVITY; HYSTERESIS; RELAXATION; RELAXATION TIME; TANTALUM SULFIDES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE; TRANSITION TEMPERATURE
- Descriptors DEC
- CHALCOGENIDES; CRYSTAL STRUCTURE; ELECTRICAL PROPERTIES; MATERIALS; PHYSICAL PROPERTIES; REFRACTORY METAL COMPOUNDS; SULFIDES; SULFUR COMPOUNDS; TANTALUM COMPOUNDS; THERMODYNAMIC PROPERTIES; TRANSITION ELEMENT COMPOUNDS