Published October 26, 1993 | Version v1
Patent Metadata-only

Microelectronic superconducting device with multi-layer contact

Creators

Description

A microelectronic component comprising a crossover is provided comprising a substrate, a first high Tc superconductor thin film, a second insulating thin film comprising SrTiO3; and a third high Tc superconducting film which has strips which crossover one or more areas of the first superconductor film. An in situ method for depositing all three films on a substrate is provided which does not require annealing steps. The photolithographic process is used to separately pattern the high Tc superconductor thin films. 14 figures

Availability note (English)

Available from Patent and Trademark Office, Box 9, Washington, DC 20232 (United States).

Additional details

Publishing Information

Imprint Pagination
[10 p.].
IPC:
Int. Cl. H01L 39/22; B05D 5/12; H01B 12/00.
IPC
Int. Cl. H01L 39/22; B05D 5/12; H01B 12/00.
Patent number
US patent document 5,256,636/A/

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
25077072
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Non-conventional Literature
Descriptors DEI
DESIGN; FABRICATION; HIGH-TC SUPERCONDUCTORS; MASKING; MICROELECTRONIC CIRCUITS; STRONTIUM TITANATES; SUPERCONDUCTING DEVICES; SUPERCONDUCTING FILMS
Descriptors DEC
ALKALINE EARTH METAL COMPOUNDS; ELECTRONIC CIRCUITS; FILMS; OXYGEN COMPOUNDS; STRONTIUM COMPOUNDS; SUPERCONDUCTORS; TITANATES; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS

Optional Information

Secondary number(s)
US patent application 7-586,435.