Published January 2005 | Version v1
Journal article Metadata-only

Concentration Dependence of Photoluminescence Spectra of Tellurium-Doped Epitaxial Films of n-GaxAl1-xP

Creators

  • 1. Georgian Academy of Sciences. R. Agladze Institute of Inorganic Chemistry and Electrochemistry, Tbilisi (Georgia)

Description

Photoluminescence has been studied for epitaxial films doped with various concentration of tellurium. It turned out that tellurium-doping in large quantities causes the green luninescence attenuation and at the same time the red luminescence origination in the films. The mentioned effect is observed for all compositions of the films under observation. We have stated that the ratios of intensities of the peaks characterizing the green and red luminescence characterizes the structure quality of the films. (author)

Additional details

Publishing Information

Journal Title
Bulletin of the Georgian National Academy of Sciences
Journal Volume
171
Journal Issue
1
Journal Page Range
p. 36-39
ISSN
0132-1447

INIS

Country of Publication
Georgia
Country of Input or Organization
Georgia
INIS RN
47064492
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ABUNDANCE; ATTENUATION; CONCENTRATION RATIO; DOPED MATERIALS; EPITAXY; FILMS; PEAKS; PHOTOLUMINESCENCE; SEMICONDUCTOR MATERIALS; SPECTRA; TELLURIUM
Descriptors DEC
CRYSTAL GROWTH METHODS; DIMENSIONLESS NUMBERS; ELEMENTS; EMISSION; LUMINESCENCE; MATERIALS; PHOTON EMISSION; SEMIMETALS

Optional Information

Notes
1 ref., 3 figs.