A non-parabolic single-band tight binding approach: capturing conduction band bending, charge accumulation and quantization at non-polar InN surfaces

A single-band tight binding approach for non-parabolic semiconductors is proposed. The method then is applied to model conduction band bending, surface electron accumulation and quantization at the m-plane surface of InN. The results are shown to compare well with published experimental angle-resolved photoemission spectroscopy data (Colakerol et al 2006 Phys. Rev. Lett. 97 237601). This simple computationally efficient approach is well suited to capture single-band phenomena in a wide variety of non-parabolic materials. (paper)