Synthesis and resistive properties of tantalum nitride films

Formation process of thin films (up to 0.1 μm) of tantalum nitride of the composition Ta2N from elements during reactive high frequency-spraying of Ta in nitrogen-argon mixture of gases is studied. The film growth rate constitutes 3-4 A/s, i.e. the flux of Ta atoms on the sublayer is approximately 6x1015 at/(cm2xs). Activation energy of the film formation process is approximately 0.007 eV. It is established that the annealing of film up to the temperatures of approximately 670 K stabilizes the value of its resistance