Ga, In1-xP (0,6≤x≤0,7) P-N junction for cascade solar elements

GaxIn1-xP p-n junction have been obtained from the gas phase where playas formed during the process of low temperature (T = 750 K) of zinc diffusion into preliminarily prepared epitaxial layers Ga, In1-xP of a 2 mcm thick permanent composition. An isotope junction layer of alternative composition with a gradient InP∼2 mo1%/mcm was introduced between nGaxIn1-xP and backing nGaP (100). Strip ohmic contacts were applies to pGaxIn1-xP and GaP. P-n junctions with the tickness of p layer of dp≤0,5 mcm have practically permanent quantum efficiency in the spectrum range of 0,3≤ λ ≤ 0,58 mcm. High efficiency of transformation in ultraviolet spectrum range is explained by a positive effect zinc concentration gradient formed in the process of diffusion of quasi-electronic field the volume of which achieves ≥ 103V/sm. Im the sun light p-n junctions had Ish.c=15...17 mA/sm2, Uxx = 1,45V which are close to estimated values (Ish.c=18mA/am2, Uxx=1,5 V). In optical switching the studied p-n junctions by GaAs p-n junctions, the radio of passing the sun light p-n GaxIn1-xP/n Ga structure was ∼60% which allowed to obtain photo-conduction density in narrow zone p-n junction and at the a consequent electric switching of the junctions putput voltage of the cascade system reached ∼ 2.55V. Due to sufficient transparency GaxIn1-xP of elements and the cascade as a whole to infra-red radiation prospects of creation three-element cascade photoconverter with use more narrow zones structures in system In-Ga-As-P or silicon are open.(Author)