Mechanoplastic tribotronic two-dimensional multibit nonvolatile optoelectronic memory

Highlights: • Multilevel storage state trigged by both mechanical and optical stimulation coupled with triboelectric nanogenerators. • High programming/erasing current ratio > 10⁷, performance stability over 200 cycles and retention time excess 10⁵ s. • High photoresponsivity of MoS₂ optical memory ~ 12000 A/W until now. • Flexible devices feasibility for wearable memories in image capturing and recording. The multi-bit nonvolatile memory based on two-dimensional material is promising for the future semiconductor industry due to the request of device's miniaturization and structure flexibility. Here, we report a novel MoS₂ nonvolatile memory combined with nanographene as floating gate realize multilevel storage state triggerd by both mechanical and optical stimulation without applying extra gate voltages. The device demonstrates excellent characteristics with high programming/erasing current ratio > 10⁷, performance stability over 200 cycles and retention time excess 10⁵ s. The extremely high photoresponsivity of MoS₂ optical memory ~ 12000 A/W is firstly reported. In addition, the stable flexibility enables integrated devices feasibility for wearable memories in image capturing and recording. The tribotronic-optoelectronic dual-gate memory opens up a new route to development of future human-robot interaction system integrating both sensing and storage.