Determination of the density of surface state levels by C-V method in SiO2-Si system

The energy distribution and density of surface states in SiSi02 interface is studied by means of the C-V method. This work has taken the following into consideration; 1) the number of the surface states present, 2) the effect of heat treatment in dry N2 at 500 deg C, and 3) their dependence on crystal orientation. Studies on crystals oriented in the <111> and <100> direction show that there are lesser states in the latter. For a crystal oriented in the <100> direction lesser interface states are expected as compared to that in the <111> because of the nature of the bonding