Doping properties in Co3-xNixO4, comparison between p-DFT and experimental values
- 1. Departamento de Física, Universidade Federal de Mato-Grosso, Cuiabá (Brazil)
- 2. Departamento de Ciencias Físicas, Universidad de La Frontera, Casilla 54-D, Temuco (Chile)
- 3. Instituto de Alta Investigación, Universidad de Tarapacá, Casilla 7D, Arica (Chile)
- 4. Departamento de Física, Universidad Nacional de Colombia, Bogotá (Colombia)
- 5. Universidad del Magdalena, Grupo de nuevos materiales, Santa Marta (Colombia)
Description
In the present work, we numerically and experimentally study the Co3-xNixO4 (spinel-like oxides) system. Using the perturbative density functional theory (p-DFT) method, we start the study from the homogeneous sample (x = 0), obtaining the main electronic properties (band structure (BS), density of states (DOS), and Fermi surface (FS)). Subsequently, we doped (x) with Ni atoms in different proportions (0–7% respectively, taking 56 atoms as 100% and the percentage of doping, on this percentage). As we increase the doping (x≠ 0), we have found that the forbidden gap decreases and the Fermi energy (FE) decreases, causing the material to exhibit a transition phase for a particular doping value. In addition, we find that more bands are generated when the system is doped, which would be responsible for the phase transition. The data from the theoretical analysis carried out in this paper was compared with the experimental data of various widely accepted works. Some of the results, when compared with the information available from the experimental ones, show good agreement. (author)
Additional details
Identifiers
Publishing Information
- Journal Title
- Pramana
- Journal Volume
- 98
- Series
- Article ID 084
- Journal Page Range
- [10 p.]
- CODEN
- PRAMCI
INIS
- Country of Publication
- India
- Country of Input or Organization
- India
- INIS RN
- 55066586
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- BAND THEORY; COBALT OXIDES; CRYSTAL DOPING; DENSITY FUNCTIONAL METHOD; DENSITY OF STATES; DOPED MATERIALS; FERMI LEVEL; GRADED BAND GAPS; NICKEL OXIDES
- Descriptors DEC
- CALCULATION METHODS; CHALCOGENIDES; COBALT COMPOUNDS; ENERGY LEVELS; MATERIALS; NICKEL COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; VARIATIONAL METHODS