Published March 1992 | Version v1
Journal article

Nonlinear optical investigation of silicon carbide surface properties

  • 1. Semiconductor Physics Dept., Vilnius Univ. (Lithuania)
  • 2. Dept. of Physics, Linkoeping Univ. (Sweden)

Description

The surface properties of SiC films grown by reactive magnetron sputtering have been investigated by several surface-sensitive methods. The XRD analysis and SEM studies determined the grown layers to be single-crystalline, polycrystalline and amorphous depending on the Si substrate temperature range during the reaction. The nonlinear optical reflectivity investigations have provided an evaluation of the surface crystalline order and measurements of effective carrier lifetime at the interface. The rotational anisotropic behavior of SHG has been observed in crystalline SiC. The dependencies obtained are in good agreement with XRD data. The relationship between the nonequilibrium carrier relaxation time and the structure of sample is discussed. (orig.)

Additional details

Publishing Information

Journal Title
Nuclear Instruments and Methods in Physics Research. Section B
Journal Volume
65
Journal Issue
1-4
Series
Nucl. Instrum. Methods Phys. Res., Sect. B.
Journal Page Range
357-360
ISSN
0168-583X
CODEN
NIMBE

Conference

Title
6. conference on radiation effects in insulators.
Dates
24-28 Jun 1991.
Place
Weimar (Germany).