Nonlinear optical investigation of silicon carbide surface properties
- 1. Semiconductor Physics Dept., Vilnius Univ. (Lithuania)
- 2. Dept. of Physics, Linkoeping Univ. (Sweden)
Description
The surface properties of SiC films grown by reactive magnetron sputtering have been investigated by several surface-sensitive methods. The XRD analysis and SEM studies determined the grown layers to be single-crystalline, polycrystalline and amorphous depending on the Si substrate temperature range during the reaction. The nonlinear optical reflectivity investigations have provided an evaluation of the surface crystalline order and measurements of effective carrier lifetime at the interface. The rotational anisotropic behavior of SHG has been observed in crystalline SiC. The dependencies obtained are in good agreement with XRD data. The relationship between the nonequilibrium carrier relaxation time and the structure of sample is discussed. (orig.)
Additional details
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section B
- Journal Volume
- 65
- Journal Issue
- 1-4
- Series
- Nucl. Instrum. Methods Phys. Res., Sect. B.
- Journal Page Range
- 357-360
- ISSN
- 0168-583X
- CODEN
- NIMBE
Conference
- Title
- 6. conference on radiation effects in insulators.
- Dates
- 24-28 Jun 1991.
- Place
- Weimar (Germany).
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 23070310
- Subject category
- S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- AMORPHOUS STATE; ANISOTROPY; CARRIER LIFETIME; CHARGE CARRIERS; FILMS; INTERFACES; LIFETIME; MONOCRYSTALS; NONLINEAR OPTICS; OPTICAL PROPERTIES; POLYCRYSTALS; RECOMBINATION; REFLECTIVITY; RELAXATION TIME; SCANNING ELECTRON MICROSCOPY; SILICON CARBIDES; SPUTTERING; SUBSTRATES; SURFACE PROPERTIES; TEMPERATURE DEPENDENCE; THIN FILMS; X-RAY DIFFRACTION
- Descriptors DEC
- CARBIDES; CARBON COMPOUNDS; COHERENT SCATTERING; CRYSTALS; DIFFRACTION; ELECTRON MICROSCOPY; MICROSCOPY; OPTICS; PHYSICAL PROPERTIES; SCATTERING; SILICON COMPOUNDS