Oxygen incorporation into B4C and boronized graphite USB15 under D-ion bombardment in oxygen atmosphere

Oxygen incorporation into boron carbide and boronized graphite USB15 under irradiation with 3 keV D-ions in oxygen atmosphere (from 10-5 to 10-3 Pa) at 300 K has been investigated by means of SIMS depth profiling. The total amount of accumulated oxygen was found to increase with the D-ion fluence until saturation was reached. The oxygen concentration at saturation was shown to rise with the boron concentration and with the oxygen pressure. Incorporated oxygen is bound mainly by boron atoms at a depth of the D-ion stopping zone. A simple equation for the calculation of ion-induced sorption of oxygen in the boron-carbon materials is proposed. (orig.)