Published May 15, 2001 | Version v1
Journal article

Moessbauer studies of impurity-vacancy complexes in ion-implanted platinum

  • 1. Rijksuniversiteit Groningen (Netherlands). Materials Science Centre
  • 2. Rijksuniversiteit Groningen (Netherlands). Lab. voor Algemene Natuurkunde

Description

Moessbauer studies using 119Sn after low-temperature implantation of 119Sb in Pt show trapping of vacancy-type defects after annealing in the region 250-400 K. Two distinct steps are observed with associated migration enthalpies Hsub(V)sup(M) = 0.82(8) eV and 1.14(8) eV, respectively. During annealing at 550 K detrapping of defects takes place. Additional trapping is observed in the region 850-1150 K. The results are in close agreement with other studies using hfi techniques and show that the conventional interpretations of recovery in Pt have to be revised. (orig.)

Additional details

Publishing Information

Journal Title
Nucl. Instrum. Methods Phys. Res.
Journal Volume
209/210
Journal Issue
pt.1
Series
Nucl. Instrum. Methods Phys. Res.
Journal Page Range
441-446
ISSN
0029-554X

Conference

Title
3. international conference on ion beam modification of materials.
Dates
6-10 Sep 1982.
Place
Grenoble (France).