Influence of temperature on the accumulation of E10 (Ec-0.62 eV) centers in n-type InP
Description
Deep level transient spectroscopy was used in a study of the influence of temperature on the accumulation of the E10 (Ec-0.62 eV) centers in Schottky-barrier n-type InP diodes irradiated with electrons. The accumulation took place in the space charge region and in the neutral bulk of the diode. An analysis of the experimental results led to the conclusion that an increase in the E10 concentration in the space charge region, compared with the bulk, was not due to a possible difference between the heights of the potential barriers during the formation of these centers or a difference between the migration energies of the components of Frenkel pairs in these two regions, but more likely due to a difference between the probabilities of separation of Frenkel pairs
Additional details
Publishing Information
- Journal Title
- Soviet Physics - Semiconductors (English Translation)
- Journal Volume
- 24
- Journal Issue
- 5
- Series
- Sov. Phys. - Semicond. (Engl. Transl.).
- Journal Page Range
- 553-555
- ISSN
- 0038-5700
- CODEN
- SPSEA
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 23014289
- Subject category
- S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Numerical Data, Translation
- Descriptors DEI
- E CENTERS; ELECTRON BEAMS; ENERGY LEVELS; EXPERIMENTAL DATA; INDIUM PHOSPHIDES; N-TYPE CONDUCTORS; PHYSICAL RADIATION EFFECTS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR MATERIALS; SPACE CHARGE; SPECTROSCOPY; TRANSIENTS
- Descriptors DEC
- BEAMS; COLOR CENTERS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DATA; INDIUM COMPOUNDS; INFORMATION; LEPTON BEAMS; MATERIALS; NUMERICAL DATA; PARTICLE BEAMS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; POINT DEFECTS; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; VACANCIES
Optional Information
- Notes
- Cover-to-cover translation of Fizika i Tekhnika Poluprovodnikov (USSR).