Published March 2004 | Version v1
Journal article

Light up-conversion effect in ZnSe-ZnTe superlattices grown on ZnSe by MBE

  • 1. Hokkaido Institute of Technology, Maeda, Teine-ku, Sapporo 006-8585 (Japan)
  • 2. Okayama University of Science, Ridaichou, Okayama 700-0005 (Japan)
  • 3. IPG Photonics Corporation, Old Webster Road, Oxford, MA 01540 (United States)
  • 4. P.N. Lebedev Physical Institute, RAS, 53 Leninsky Ave, Moscow 117756 (Russian Federation)

Description

ZnSe-ZnTe superlattices (SL's) with dual subband structures have been succesfully grown on ZnSe substrates. Those SL's show the so-called light up-conversion effect. The efficiency of the up-conversion has been improved by about 30 times compaired to the SL structures grown on usual GaAs substrate. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Availability note (English)

Available from: http://dx.doi.org/10.1002/pssc.200304185

Additional details

Identifiers

Publishing Information

Journal Title
Physica Status Solidi. C, Conferences
Journal Volume
1
Journal Issue
4
Journal Page Range
p. 993-996
ISSN
1610-1634

Conference

Title
11. International conference o II-VI compounds (II-VI 2003)
Dates
22-26 Sep 2003
Place
Niagara Falls, NY (United States)

Optional Information

Notes
With 6 figs., 10 refs.. SICI: 1610-1634(200403)1:4<993::AID-PSSC200304185>3.0.TX;2-Y