Published May 1973
| Version v1
Journal article
Semiconductor silicon photodiodes with p-i-n structure
Description
no abstract available
Additional details
Additional titles
- Original title (Russian)
- Полупроводниковые кремниевые фотодиоды с п-и-н-структурой
Publishing Information
- Journal Title
- Prib. Tekh. Ehksp.
- Journal Issue
- no.3
- Series
- Prib. Tekh. Ehksp.
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 5127964
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- DIAGRAMS; PHOTODIODES; PRODUCTION; SENSITIVITY; SILICON DIODES; TESTING; TIME RESOLUTION
- Descriptors DEC
- RESOLUTION; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; TIMING PROPERTIES
Optional Information
- Notes
- For English translation see the journal Instrum. Exp. Tech.