Published May 2004
| Version v1
Journal article
Influence of growth temperature on the easy magnetization axis switch and domain structure in Fe/GaAs(1 0 0) structures
Description
Dependence of the easy magnetization axis switch (EMAS) and domain structure in Fe films grown on GaAs(1 0 0) substrates on the growth temperature and deposition rate was investigated. It was found that the EMAS can be observed at substrate temperature less than 140 deg. C. The thickness of 'switched' film nonmonotonically depends on the deposition rate. Domain structures in Fe/GaAs(1 0 0) films are discussed
Additional details
Identifiers
- DOI
- 10.1016/j.jmmm.2003.12.1266;
- PII
- S0304885303026544;
Publishing Information
- Journal Title
- Journal of Magnetism and Magnetic Materials
- Journal Volume
- 272-276
- Journal Issue
- 6
- Journal Page Range
- p. E937-E939
- ISSN
- 0304-8853
- CODEN
- JMMMDC
Conference
- Title
- International conference on magnetism
- Acronym
- ICM 2003
- Dates
- 27 Jul - 1 Aug 2003
- Place
- Rome (Italy)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 36054205
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANISOTROPY; DEPOSITION; DOMAIN STRUCTURE; GALLIUM ARSENIDES; IRON; MAGNETIZATION; THICKNESS; THIN FILMS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; DIMENSIONS; ELEMENTS; FILMS; GALLIUM COMPOUNDS; METALS; PNICTIDES; TRANSITION ELEMENTS
Optional Information
- Copyright
- Copyright (c) 2003 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.