Evolutions of residual stress and microstructure in ZrO2 thin films deposited at different temperatures and rates
Creators
Description
The residual stress in ZrO2 thin films prepared by electron beam evaporation was measured by viewing the substrate deformation using an optical interferometer. The influences of deposition temperature and deposition rate on the residual stress have been studied. The results show that residual stress in ZrO2 thin films varies from tensile to compressive depending on deposition temperature and deposition rate, respectively. The value of compressive stress increases with the increasing of deposition temperature and deposition rate. At the same time, X-ray diffraction measurement was carried out in order to examine the crystallization behavior of the ZrO2 thin films as a function of deposition temperature and deposition rate. The relationship between the residual stress and the microstructure has also been discussed
Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2003.08.051;
- PII
- S004060900301201X;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 445
- Journal Issue
- 1
- Journal Page Range
- p. 59-62
- ISSN
- 0040-6090
- CODEN
- THSFAP
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37013678
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CRYSTALLIZATION; DEFORMATION; DEPOSITION; ELECTRON BEAMS; EVAPORATION; INTERFEROMETERS; MICROSTRUCTURE; RESIDUAL STRESSES; THIN FILMS; X-RAY DIFFRACTION; ZIRCONIUM OXIDES
- Descriptors DEC
- BEAMS; CHALCOGENIDES; COHERENT SCATTERING; DIFFRACTION; FILMS; LEPTON BEAMS; MEASURING INSTRUMENTS; OXIDES; OXYGEN COMPOUNDS; PARTICLE BEAMS; PHASE TRANSFORMATIONS; SCATTERING; STRESSES; TRANSITION ELEMENT COMPOUNDS; ZIRCONIUM COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2003 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.