Published November 24, 2003 | Version v1
Journal article

Evolutions of residual stress and microstructure in ZrO2 thin films deposited at different temperatures and rates

Description

The residual stress in ZrO2 thin films prepared by electron beam evaporation was measured by viewing the substrate deformation using an optical interferometer. The influences of deposition temperature and deposition rate on the residual stress have been studied. The results show that residual stress in ZrO2 thin films varies from tensile to compressive depending on deposition temperature and deposition rate, respectively. The value of compressive stress increases with the increasing of deposition temperature and deposition rate. At the same time, X-ray diffraction measurement was carried out in order to examine the crystallization behavior of the ZrO2 thin films as a function of deposition temperature and deposition rate. The relationship between the residual stress and the microstructure has also been discussed

Additional details

Identifiers

DOI
10.1016/j.tsf.2003.08.051;
PII
S004060900301201X;

Publishing Information

Journal Title
Thin Solid Films
Journal Volume
445
Journal Issue
1
Journal Page Range
p. 59-62
ISSN
0040-6090
CODEN
THSFAP

Optional Information

Copyright
Copyright (c) 2003 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.