Published 1997 | Version v1
Book Metadata-only

Investigation into large defects formed by fast neutrons in silicon oxide film

Creators

  • 1. Moskovskij Gosudarstvennyj Inzhenerno-Fizicheskij Inst. (Tekhnicheskij Univ.), Moscow (Russian Federation)

Description

The method of nondestructive measurement of dielectric breakdown voltage was used for studying the formation of large-size defects in SiO2 films during irradiation of Si-SiO2 structure by fast neutrons. Large-size defects spectrum was recorded. It is shown that a large-size defect (cluster) appears in SiO2 thin film per each ∼ 15 mln. of initially knocked out atoms

Abstract (Russian)

Метод неразрушающего измерения пробивных напряжений диэлектрика применен для исследования образования крупных дефектов в пленках SiO2 при облучении быстрыми нейтронами структуры Si-SiO2. Получен спектр крупных дефектов. Показано, что один крупный дефект (кластер) возникает в тонкой пленке SiO2 ∼ на каждые 15 миллионов первично выбитых атомов
Part of:
National conference on the application of X-rays, synchrotron radiation, neutrons and electrons for materials study (the continuation of All-Union Meetings on the application of X-rays for materials research). Summary of reports. Volume 3

Additional details

Additional titles

Original title (Russian)
Исследование образованных быстрыми нейтронами крупных дефектов в пленке оксида кремния

Publishing Information

Publisher
OIYaI
Imprint Place
Dubna (Russian Federation)
ISBN
5-85165-483-X
Imprint Title
National conference on the application of X-rays, synchrotron radiation, neutrons and electrons for materials study (the continuation of All-Union Meetings on the application of X-rays for materials research). Summary of reports. Volume 3
Imprint Pagination
370 p.
Journal Page Range
p. 290-294

Conference

Title
National conference on the application of X-rays, synchrotron radiation, neutrons and electrons for materials study (the continuation of All-Union Meetings on the application of X-rays for materials research)
Original Conference Title
Natsional'naya konferentsiya po primeneniyu rentgenovskogo, sinkhrotronnogo izluchenij, nejtronov i ehlektronov dlya issledovaniya materialov (prodolzhenie Vsesoyuznykh soveshchanij po primeneniyu rentgenovskikh luchej dlya issledovaniya materialov)
Dates
25-29 May 1997
Place
Dubna (Russian Federation)

INIS

Country of Publication
Russian Federation
Country of Input or Organization
Russian Federation
INIS RN
33025861
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ATOMIC CLUSTERS; FAST NEUTRONS; GAMMA RADIATION; NEUTRON FLUENCE; PHYSICAL RADIATION EFFECTS; SEMICONDUCTOR MATERIALS; SILICON; SILICON OXIDES; SPECTRA; THIN FILMS
Descriptors DEC
BARYONS; CHALCOGENIDES; ELECTROMAGNETIC RADIATION; ELEMENTARY PARTICLES; ELEMENTS; FERMIONS; FILMS; HADRONS; IONIZING RADIATIONS; MATERIALS; NEUTRONS; NUCLEONS; OXIDES; OXYGEN COMPOUNDS; RADIATION EFFECTS; RADIATIONS; SEMIMETALS; SILICON COMPOUNDS

Optional Information

Notes
3 refs., 2 figs. Imprint:Natsional'naya konferentsiya po primeneniyu rentgenovskogo, sinkhrotronnogo izluchenij, nejtronov i ehlektronov dlya issledovaniya materialov (prodolzhenie Vsesoyuznykh soveshchanij po primeneniyu rentgenovskikh luchej dlya issledovaniya materialov). Sbornik dokladov. Tom 3
Secondary number(s)
JINR-R--14-97-343