Published March 10, 2010
| Version v1
Journal article
The frequency-domain relaxation response of gallium doped Cd1-xMnxTe
- 1. Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw (Poland)
- 2. Hugo Steinhaus Center, Institute of Mathematics and Computer Science, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw (Poland)
Description
In this paper the complex dielectric permittivity of gallium doped Cd0.99Mn0.01Te mixed crystals is studied at different temperatures. We observe a two-power-law relaxation pattern with m and n, the low- and high-frequency power-law exponents respectively, satisfying the relation m < 1 - n. To interpret the empirical result we propose a correlated-cluster relaxation mechanism. This approach allows us to find origins of both power-law exponents, m and n.
Availability note (English)
Available from http://dx.doi.org/10.1088/0953-8984/22/9/095802Additional details
Identifiers
- DOI
- 10.1088/0953-8984/22/9/095802;
- PII
- S0953-8984(10)40287-8;
Publishing Information
- Journal Title
- Journal of Physics. Condensed Matter
- Journal Volume
- 22
- Journal Issue
- 9
- Journal Page Range
- [4 p.]
- ISSN
- 0953-8984
- CODEN
- JCOMEL
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 41110691
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CADMIUM COMPOUNDS; CRYSTALS; DIELECTRIC MATERIALS; DOPED MATERIALS; GALLIUM ADDITIONS; MANGANESE ADDITIONS; PERMITTIVITY; RELAXATION; TELLURIUM COMPOUNDS; TEMPERATURE DEPENDENCE
- Descriptors DEC
- ALLOYS; DIELECTRIC PROPERTIES; ELECTRICAL PROPERTIES; GALLIUM ALLOYS; MANGANESE ALLOYS; MATERIALS; PHYSICAL PROPERTIES; TRANSITION ELEMENT ALLOYS