Published 1993
| Version v1
Book
Origin of selectivity in chemical vapor deposition of tungsten using SiH4 or SiH2F2 as a reducing gas of WF6
- 1. Hitachi, Ltd., Tokyo (Japan). Central Research Lab.
Description
The adsorption of WF6, SiH4, SiH2F2, SiHF3 and SiF4 in selective W-CVD is investigated in situ using Fourier-transform infrared reflection absorption spectroscopy (FTIR-RAS). The selectivity for W growth is found to originate mainly from the dissociation of the reducing gas (SiH4 or SiH2F2), and not from the dissociation of WF6. That is, the reducing gas dissociates on a W surface to form Si-containing adsorbed species, but not on an SiO2 surface. WF6 can easily react with the Si-containing adsorbed species on the W surface to form W and by-product gases SiHF3 and SiF4
Additional details
Publishing Information
- Publisher
- Electrochemical Society.
- Imprint Place
- Pennington, NJ (United States)
- ISBN
- 1-56677-074-2
- Imprint Title
- Proceedings of the twelfth international symposium on chemical vapor deposition
- Imprint Pagination
- 451 p.
- Journal Page Range
- p. 250-256.
Conference
- Title
- 183. Electrochemical Society meeting.
- Dates
- 16-21 May 1993.
- Place
- Honolulu, HI (United States).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 25005352
- Subject category
- S36: MATERIALS SCIENCE; S37: INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY;
- Resource subtype / Literary indicator
- Conference, Numerical Data
- Descriptors DEI
- ABSORPTION SPECTROSCOPY; ADSORPTION; CHEMICAL REACTION KINETICS; CHEMICAL REACTIONS; CHEMICAL VAPOR DEPOSITION; DISSOCIATION; EXPERIMENTAL DATA; FOURIER TRANSFORMATION; INFRARED RADIATION; REDUCTION; SILANES; SILICON FLUORIDES; SURFACE PROPERTIES; TUNGSTEN; TUNGSTEN FLUORIDES
- Descriptors DEC
- CHEMICAL COATING; DATA; DEPOSITION; ELECTROMAGNETIC RADIATION; ELEMENTS; FLUORIDES; FLUORINE COMPOUNDS; HALIDES; HALOGEN COMPOUNDS; HYDRIDES; HYDROGEN COMPOUNDS; INFORMATION; INTEGRAL TRANSFORMATIONS; KINETICS; METALS; NUMERICAL DATA; RADIATIONS; REACTION KINETICS; SILICON COMPOUNDS; SILICON HALIDES; SORPTION; SPECTROSCOPY; SURFACE COATING; TRANSFORMATIONS; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS; TUNGSTEN COMPOUNDS
Optional Information
- Notes
- Imprint:The Electrochemical Society, Incorporated, 10 South Main Street, Pennington, NJ 08534-2896 (United States).
- Secondary number(s)
- CONF-930571--.