Published January 1, 1994 | Version v1
Journal article Metadata-only

Rapid thermal process-induced defects in silicon position detectors

Creators

  • 1. INFN Bologna (Italy)
  • 2. Dipt. di Fisica, Univ. Modena (Italy)
  • 3. Dipt. di Fisica, Univ. Bologna (Italy)

Description

Short communication

Additional details

Publishing Information

Journal Title
Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
Journal Volume
337
Journal Issue
2-3
Journal Page Range
p. 394-402.
ISSN
0168-9002
CODEN
NIMAER

INIS

Country of Publication
Netherlands
Country of Input or Organization
Netherlands
INIS RN
25037287
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Resource subtype / Literary indicator
No Abstract
Descriptors DEI
ALPHA DETECTION; ALPHA SPECTRA; CRYSTAL DEFECTS; DISLOCATIONS; ELECTRIC CONDUCTIVITY; ENERGY SPECTRA; LEAKAGE CURRENT; MEV RANGE 01-10; N-TYPE CONDUCTORS; P-TYPE CONDUCTORS; POSITION SENSITIVE DETECTORS; SCANNING ELECTRON MICROSCOPY; SHEETS; SI SEMICONDUCTOR DETECTORS; SILICON; SILICON DIODES; SILICON OXIDES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0400-1000 K; TEMPERATURE RANGE 1000-4000 K; THERMAL STRESSES
Descriptors DEC
CHALCOGENIDES; CHARGED PARTICLE DETECTION; CRYSTAL STRUCTURE; CURRENTS; DETECTION; ELECTRIC CURRENTS; ELECTRICAL PROPERTIES; ELECTRON MICROSCOPY; ELEMENTS; ENERGY RANGE; LINE DEFECTS; MATERIALS; MEASURING INSTRUMENTS; MEV RANGE; MICROSCOPY; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; RADIATION DETECTION; RADIATION DETECTORS; SEMICONDUCTOR DETECTORS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMICONDUCTOR MATERIALS; SEMIMETALS; SILICON COMPOUNDS; SPECTRA; STRESSES; TEMPERATURE RANGE