Published August 1983
| Version v1
Journal article
Temperature dependence of the X-ray diffuse scattering intensity in V3Si in the temperature range from 8 to 300 K
- 1. AN Belorusskoj SSR, Minsk. Inst. Fiziki Tverdogo Tela i Poluprovodnikov
Description
Measurements of the diffuse X-ray scattering are performed from the (110) plane in V3Si single crystal at different temperatures from 300 to 8 K. Contours of equal diffuse scattering intensity are drawn over the 440 node in the (001) and (1-bar11) sections. The temperature dependence and the anisotropy of the thermal diffuse scattering intensity distribution for this compound are analysed. (author)
Additional details
Publishing Information
- Journal Title
- Cryst. Res. Technol.
- Journal Volume
- 18
- Journal Issue
- 8
- Series
- Cryst. Res. Technol.
- Journal Page Range
- 1029-1034
- ISSN
- 0232-1300
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- German Democratic Republic
- INIS RN
- 14805174
- Subject category
- S37: INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY;
- Descriptors DEI
- ANISOTROPY; DISTRIBUTION FUNCTIONS; INTERMETALLIC COMPOUNDS; MEDIUM TEMPERATURE; MONOCRYSTALS; TEMPERATURE DEPENDENCE; ULTRALOW TEMPERATURE; VANADIUM SILICIDES; X-RAY DIFFRACTION
- Descriptors DEC
- ALLOYS; COHERENT SCATTERING; CRYSTALS; DIFFRACTION; SCATTERING; SILICIDES; SILICON COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; VANADIUM COMPOUNDS