Published July 2007 | Version v1
Journal article

Spectra of differential gain and linewidth enhancement factor in InGaAsN/GaAs single quantum well structures

  • 1. Department of Physics and Computer Science, Wilfrid Laurier University, Waterloo, Ontario, N2L3C5 (Canada)

Description

The differential gain and linewidth enhancement factor (α-factor) of a new material system InGaAsN/GaAs is studied using the 10-band k . p Hamiltonian matrix. A self-consistent scheme which involves simultaneous solution of the Schroedinger and Poisson equations is applied. It is shown that spectra of differential gain and α -factor have significant variation versus nitrogen composition and carrier density. The determined parameters and their variations play important role in designing practical structures based on InGaAsN/GaAs material system. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Availability note (English)

Available from: http://dx.doi.org/10.1002/pssa.200622318

Additional details

Identifiers

Publishing Information

Journal Title
Physica Status Solidi. A, Applied Research
Journal Volume
204
Journal Issue
7
Journal Page Range
p. 2487-2494
ISSN
0031-8965
CODEN
PSSABA

Optional Information

Notes
With 6 figs., 1 tab., 22 refs.. SICI: 0031-8965(200707)204:7<2487::AID-PSSA200622318>3.0.TX;2-E