Published August 1, 1975
| Version v1
Journal article
Continuous operation over 10 000 h of GaAs/GaAlAs double-heterostructure laser without lattice mismatch compensation
Creators
- 1. Mitsubishi Electric Corporation, Itami, Hyogo, Japan
Description
By improving the crystal growth conditions, continuous operation over 10,000 h has been achieved with a conventional metallic stripe geometry double-heterostructure laser without using additional Al to the GaAs active region or P to the adjacent GaAlAs layers, and this laser is still being operated
Additional details
Identifiers
- DOI
- 10.1063/1.88383;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 27
- Journal Issue
- 3
- Series
- Appl. Phys. Lett.
- Journal Page Range
- 138-139
- ISSN
- 0003-6951
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 6215490
- Subject category
- S42: ENGINEERING;
- Descriptors DEI
- ALUMINIUM ARSENIDES; CRYSTAL GROWTH; DOPED MATERIALS; EPITAXY; GALLIUM ARSENIDES; OPERATION; PHOTOLUMINESCENCE; SEMICONDUCTOR DIODES; SEMICONDUCTOR LASERS
- Descriptors DEC
- ALUMINIUM COMPOUNDS; AMPLIFIERS; ARSENIC COMPOUNDS; ARSENIDES; GALLIUM COMPOUNDS; LASERS; LUMINESCENCE; SEMICONDUCTOR DEVICES; SOLID STATE LASERS
Optional Information
- Notes
- Updated automatically by Metadata and Full-Text Enrichment Agent