The behaviour of heat capacity, entropy, enthalpy and Gibbs energy of ferroelectric-semiconductor of germanium telluride at para phase state

Present article is devoted to study of behaviour of heat capacity, entropy, enthalpy and Gibbs energy of ferroelectric-semiconductor of germanium telluride at para phase state. The data on specific heat, entropy, enthalpy and Gibbs energy measurement of ferroelectric-semiconductor of germanium telluride at para phase state at various temperatures has been obtained by means of experimental-theoretical method. On the basis of experimental data and thermodynamic similarity law the number of empirical equations have been obtained.