Published 2007
| Version v1
Journal article
Oxygen adsorption on the Ge/Si(001) surface
- 1. Kiyivs'kij Unyiversitet, Kyiv (Ukraine)
Description
Core level shifts for Si+1, Si2+, and Si3+ stable configurations have been computed. It has been found that the formation of Si2+ species is energetically favorable in agreement with experiment. Oxygen atom promotes mixing of Si and Ge atoms that results in the changes of the atomic oxygen chemisorption energies. The interaction of oxygen atoms with Ge/Si(001) surface is non-local
Additional details
Additional titles
- Original title (Ukrainian)
- Adsorbtsyiya kisnyu na poverkhnyi Ge/Si(001)
Publishing Information
- Journal Title
- Vyisnyk Kyivskogo Universytetu. Fyiziko-Matematichnyi Nauki
- Journal Issue
- no.2
- Journal Page Range
- p. 207-210
- ISSN
- 1812-5409
INIS
- Country of Publication
- Ukraine
- Country of Input or Organization
- Ukraine
- INIS RN
- 39064536
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ADSORPTION; CHEMISORPTION; DIFFUSION; GERMANIUM; OXIDATION; OXYGEN; SILICON
- Descriptors DEC
- CHEMICAL REACTIONS; ELEMENTS; METALS; NONMETALS; SEMIMETALS; SEPARATION PROCESSES; SORPTION