Published November 1998 | Version v1
Journal article

Enhanced adhesion buffer layer for deep x-ray lithography using hard x rays

  • 1. Advanced Photon Source APS-XFD, Argonne National Laboratory, Argonne, Illinois 60439 (United States)

Description

The first step in the fabrication of microstructures using deep x-ray lithography (DXRL) is the irradiation of an x-ray sensitive resist like polymethylmethacrylate (PMMA) by hard x rays. At the Advanced Photon Source, a dedicated beamline allows the proper exposure of very thick (several mm) resists. To fabricate electroformed metal microstructures with heights of several mm, a PMMA sheet is glued onto a metallic plating base. An important requirement is that the PMMA layer must adhere well to the plating base. The adhesion is greatly reduced by the penetration of even a small fraction of hard x rays through the mask absorber into the substrate. In this work we will show a novel technique to improve the adhesion of PMMA onto high-Z substrates for DXRL. Results of the improved adhesion are shown for different exposure/substrate conditions. copyright 1998 American Vacuum Society

Additional details

Additional titles

Augmented title (English)
PMMA

Publishing Information

Journal Title
Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena
Journal Volume
16
Journal Issue
6
Journal Page Range
p. 3539-3542
ISSN
0734-211X
CODEN
JVTBD9

Conference

Title
42. international conference on electron, ion, and photon beam technology and nanofabrication
Dates
26-29 May 1998
Place
Chicago, IL (United States)

Optional Information

Secondary number(s)
CONF-9805132--