Published August 17, 2015 | Version v1
Journal article Metadata-only

Tuning piezoresistive transduction in nanomechanical resonators by geometrical asymmetries

Creators

  • 1. Institut de Microelectrònica de Barcelona (IMB-CNM CSIC), Campus UAB, 08193 Bellaterra (Spain)
  • 2. Institut Català de Nanociència i Nanotecnologia (ICN2), Campus UAB, 08193 Bellaterra Spain (Spain)
  • 3. Instituto de Microelectrónica de Madrid (IMM-CSIC), 28760 Tres Cantos, Madrid (Spain)

Description

The effect of geometrical asymmetries on the piezoresistive transduction in suspended double clamped beam nanomechanical resonators is investigated. Tapered silicon nano-beams, fabricated using a fast and flexible prototyping method, are employed to determine how the asymmetry affects the transduced piezoresistive signal for different mechanical resonant modes. This effect is attributed to the modulation of the strain in pre-strained double clamped beams, and it is confirmed by means of finite element simulations

Additional details

Identifiers

DOI
10.1063/1.4928709;

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
107
Journal Issue
7
Journal Page Range
p. 073104-073104.5
ISSN
0003-6951
CODEN
APPLAB

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
47059193
Subject category
S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
Descriptors DEI
ASYMMETRY; BEAMS; FINITE ELEMENT METHOD; MODULATION; RESONATORS; SIGNALS; SILICON; SIMULATION; STRAINS; TUNING
Descriptors DEC
CALCULATION METHODS; ELECTRONIC EQUIPMENT; ELEMENTS; EQUIPMENT; MATHEMATICAL SOLUTIONS; NUMERICAL SOLUTION; SEMIMETALS

Optional Information

Notes
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