Defect studies in ion irradiated AlGaN

Defects created in Al0.4Ga0.6N crystals by 320 keV Ar ion irradiation were studied by using RBS/C and TEM techniques. One of the main aims of the work was to use a new version of McChasy, a Monte-Carlo simulation code of backscattering spectra, for the analysis of experimental results obtained for a dislocations-containing crystal. Transmission Electron Microscopy technique was used to get a better insight into dislocation and dislocation loop geometries in order to restrict the range of parameters used in simulations. RBS/C analysis was performed in a 1.5 MeV - 3 MeV energy range in order to check if MC simulations correctly reproduce backscattering spectra at different energies.