Published December 31, 2003 | Version v1
Journal article Metadata-only

Correlation among structural, electrical, and deep-level properties of Fe centers implanted in InP

Creators

Description

The Fe-related properties in high-temperature Fe implanted and annealed InP were studied by means of PIXE-RBS-channeling and correlated with the results of electrical (current-voltage) measurements. It is found that the point defect mobility, the concentration of substitutional Fe, and the resistivity of the implanted layer, all follow a similar temperature behavior. For annealing temperatures higher than 500 deg. C semi-insulating behavior controlled by the Fe2+ deep levels is observed

Additional details

Identifiers

DOI
10.1016/j.physb.2003.09.021;
PII
S0921452603006884;

Publishing Information

Journal Title
Physica. B, Condensed Matter
Journal Volume
340-342
Journal Issue
3-4
Journal Page Range
p. 403-406
ISSN
0921-4526
CODEN
PHYBE3

Conference

Title
22. international conference on defects in semiconductors
Dates
28 Jul - 1 Aug 2003
Place
Aarhus (Denmark)

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
36112875
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ANNEALING; CHANNELING; CORRELATIONS; ELECTRIC CONDUCTIVITY; INDIUM PHOSPHIDES; ION IMPLANTATION; IRON IONS; LAYERS; MOBILITY; PIXE ANALYSIS; POINT DEFECTS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; TEMPERATURE RANGE 0400-1000 K
Descriptors DEC
CHARGED PARTICLES; CHEMICAL ANALYSIS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELECTRICAL PROPERTIES; HEAT TREATMENTS; INDIUM COMPOUNDS; IONS; NONDESTRUCTIVE ANALYSIS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; SPECTROSCOPY; TEMPERATURE RANGE; X-RAY EMISSION ANALYSIS

Optional Information

Copyright
Copyright (c) 2003 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.