Published October 2017 | Version v1
Journal article

The formation and optical properties of planar waveguide in laser crystal Nd:YGG by carbon ion implantation

  • 1. School of Science, Shandong Jianzhu University, Jinan 250101 (China)
  • 2. School of Physics and Electronics, Shandong Normal University, Jinan 250014 (China)
  • 3. School of Physics, Shandong University, Jinan 250100 (China)

Description

As one kind of prominent laser crystal, Nd:Y3Ga5O12 (Nd:YGG) crystal has outstanding performance on laser excitation at multi-wavelength which have shown promising applications in optical communication field. In addition, Nd:YGG crystal has potential applications in medical field due to its ability of emit the laser at 1110 nm. Optical waveguide structure with high quality could improve the efficiency of laser emission. In this work, we fabricated the optical planar waveguide on Nd:YGG crystal by medium mass ion implantation which was convinced an effective method to realize a waveguide structure with superior optical properties. The sample is implanted by C ions at energy of 5.0 MeV with the fluence of 1 × 1015 ions/cm2. We researched the optical propagation properties in the Nd:YGG waveguide by end-face coupling and prism coupling method. The Nd ions fluorescent properties are obtained by a confocal micro-luminescence measurement. The fluorescent properties of Nd ions obtained good reservation after C ion implantation. Our work has reference value for the application of Nd:YGG crystal in the field of optical communication.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.nimb.2017.05.010

Additional details

Additional titles

Augmented title (English)
KEYWORDS: ION IMPLANTATION;WAVEGUIDE;ND

Identifiers

DOI
10.1016/j.nimb.2017.05.010;
PII
S0168583X17305852;

Publishing Information

Journal Title
Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms
Journal Volume
409
Journal Page Range
p. 163-166
ISSN
0168-583X
CODEN
NIMBEU

Conference

Title
20. international conference on ion beam modification of materials
Acronym
IBMM 2016
Dates
30 Oct - 4 Nov 2016
Place
Wellington (New Zealand)

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
51066104
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CARBON IONS; CRYSTALLIZATION; CRYSTALS; ION IMPLANTATION; LASERS; NEODYMIUM IONS; OPTICAL PROPERTIES; WAVEGUIDES
Descriptors DEC
CHARGED PARTICLES; IONS; PHASE TRANSFORMATIONS; PHYSICAL PROPERTIES

Optional Information

Copyright
Copyright (c) 2017 Elsevier B.V. All rights reserved.