Peculiarities of the Ag-Si interface formed under simultaneous deposition and ion beam irradiation

Silver films were deposited onto (100) silicon substrates by ion sputtering. The growing Ag film was irradiated by 50 to 175 keV Ar+ ions during its formation. The film composition was studied by Auger electron depth profiling determining growth and dynamic mixing. The thickness of the mixed Ag-Si layer ranges from 2.0 to 20.0 nm for various Ar+ ion irradiation doses. The mean-square diffusion range Dt (D = diffusion coefficient, t = diffusion time) for Ag atoms is equal to 10-14 to 10-12 cm2 at room temperature. Pre-amorphization of the substrate allows to control the distribution of Ag atoms in the substrate and to obtain a transition layer with constant concentration of Ag atoms into depth