Surface energy and surface self-diffusion of Al calculated by embedded atom method
- 1. College of Physical Science and Technology, Guangxi University, Nanning, Guangxi 530004 (China)
- 2. Lynbrook High School, 1280 Johnson Avenue, San Jose, CA 95129 (United States)
Description
In this work the surface energies of Al with different miller indices were calculated with an analytic long-range interaction embedded atom potential. The vacancy formation and migration energies of surface for Al (1 0 0), (1 1 0) and (1 1 1) planes were also calculated. The results show that the close-packed (1 1 1) surface has the lowest surface energy and the (1 1 0) surface has the largest surface energy. There is a significant difference among the vacancy formation energies between the different surfaces. The vacancy formation energy of the (1 1 1) surface is the highest, while that of the (1 1 0) surface is the lowest. This is consistent with the results of other theories. The Al self-diffusion by the vacancy mechanism and adatom mechanism on the surface is easier than that in the bulk
Availability note (English)
Available from http://dx.doi.org/10.1016/j.physb.2013.03.043Additional details
Identifiers
- DOI
- 10.1016/j.physb.2013.03.043;
- PII
- S0921-4526(13)00208-1;
Publishing Information
- Journal Title
- Physica. B, Condensed Matter
- Journal Volume
- 422
- Journal Page Range
- p. 51-55
- ISSN
- 0921-4526
- CODEN
- PHYBE3
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45056911
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ATOMS; FORMATION HEAT; INTERACTION RANGE; MIGRATION; MILLER INDICES; POTENTIALS; SELF-DIFFUSION; SURFACE ENERGY; SURFACES; VACANCIES
- Descriptors DEC
- CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DIFFUSION; DISTANCE; ENERGY; ENTHALPY; FREE ENERGY; PHYSICAL PROPERTIES; POINT DEFECTS; REACTION HEAT; SURFACE PROPERTIES; THERMODYNAMIC PROPERTIES
Optional Information
- Copyright
- Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.