Published June 29, 2015
| Version v1
Journal article
Space-and-time-resolved spectroscopy of single GaN nanowires
Creators
- 1. Laboratory for Electro-Optics Systems, Indian Space Research Organization, Bangalore 560058 (India)
- 2. Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)
- 3. Department of Chemical and Materials Engineering, New Mexico State University, Las Cruces, New Mexico 88003 (United States)
- 4. Sandia National Laboratories, P.O. Box 5800, MS-1086, Albuquerque, New Mexico 87185 (United States)
Description
Gallium nitride nanowires have garnered much attention in recent years due to their attractive optical and electrical properties. An understanding of carrier transport, relaxation, and recombination in these quasi-one-dimensional nanosystems is therefore important in optimizing them for various applications. Here, we present ultrafast optical microscopic measurements on single GaN nanowires. Our experiments, performed while varying the light polarization, excitation fluence, and position, give insight into the mechanisms governing carrier dynamics in these nanosystems
Additional details
Identifiers
- DOI
- 10.1063/1.4923273;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 106
- Journal Issue
- 26
- Journal Page Range
- p. 263103-263103.5
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 47051998
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- CARRIERS; ELECTRICAL PROPERTIES; EXCITATION; GALLIUM NITRIDES; NANOWIRES; POLARIZATION; RECOMBINATION; RELAXATION; SPECTROSCOPY; TIME RESOLUTION
- Descriptors DEC
- ENERGY-LEVEL TRANSITIONS; GALLIUM COMPOUNDS; NANOSTRUCTURES; NITRIDES; NITROGEN COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; RESOLUTION; TIMING PROPERTIES
Optional Information
- Notes
- (c) 2015 AIP Publishing LLC