Published February 2019
| Version v1
Journal article
The Influence of the InAlAs Layer Surface Morphology on the Temperature Dependence of Parameters of Au/Ti/n-InAlAs(001) Schottky Diodes
Creators
- 1. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences (Russian Federation)
Description
Growth-related structural defects present on the surface of InAlAs layers grown by molecular beam epitaxy on InP(001) substrates influence the temperature dependences of the current–voltage characteristics of Au/Ti/InAlAs Schottky barriers. It is established that these defects in the form of pits cause the appearance of regions with reduced barrier height. At a surface density of ≥107 cm–2, these defects significantly influence the parameters of the Schottky barriers at temperatures below 200 K.
Additional details
Identifiers
Publishing Information
- Journal Title
- Technical Physics Letters
- Journal Volume
- 45
- Journal Issue
- 2
- Journal Page Range
- p. 180-184
- ISSN
- 1063-7850
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 51093292
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ALUMINIUM ARSENIDES; CRYSTAL GROWTH; DEFECTS; DENSITY; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; INDIUM ARSENIDES; INDIUM PHOSPHIDES; MOLECULAR BEAM EPITAXY; MORPHOLOGY; SCHOTTKY BARRIER DIODES; SUBSTRATES; SURFACES; TEMPERATURE DEPENDENCE
- Descriptors DEC
- ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; CURRENTS; EPITAXY; INDIUM COMPOUNDS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES
Optional Information
- Copyright
- Copyright (c) 2019 Pleiades Publishing, Ltd.