TEM investigation of silicon devices

As the layers of materials in a silicon device decrease in thickness in order to improve the performance of the device, analytical techniques with nanometer resolution are required to characterise the materials. The aim of this project was to evaluate and demonstrate the TEM for use in materials characterisation in device technology. In doing so, new TEM techniques have been devised and existing techniques have been developed to describe the fine structure of a material and what happens at the interfaces between different materials