Published December 2012 | Version v1
Journal article

Influence of defect mobility on electrostrain in acceptor-doped Ba0.80Sr0.20TiO3

  • 1. Center for Materials for Electronics Technology, Scientific Society, Department of Information Technology, Ministry of Communications and Information Technology, Government of India, Thrissur 680 581, Kerala (India)

Description

This study reports significant differences in the defect-mediated electrostrain in B-site trivalent ions (Fe3+ and Mn3+) doped Barium titanate based system. Electron Paramagnetic Resonance (EPR) Spectroscopy has been employed as a structural probe for understanding the symmetry of defects. Differences in the reorientation of the defect dipoles have been correlated with the electrostrain. Mechanism for the higher strain in Mn-doped system has also been explained.

Additional details

Identifiers

Publishing Information

Journal Title
AIP Advances
Journal Volume
2
Journal Issue
4
Journal Page Range
p. 042177-042177.4
ISSN
2158-3226
CODEN
AAIDBI

Optional Information

Notes
(c) 2012 Author(s)