Published 2005
| Version v1
Book
Oxidation of Si(001) studied by high-resolution RBS in combination with stable isotope tracing
Creators
- 1. Dept. of Engineering Physics and Mechanics, Kyoto Univ., Kyoto (Japan)
- 2. Dept. of Applied Physics and Physico-Informatics and CREST-JST, Keio Univ., Yokohama (Japan)
- 3. NTT Basic Research Labs., NTT Corporation, Atsugi (Japan)
- 4. Inst. of Physics, Univ. of Tsukuba, Tsukuba (Japan)
Description
The oxidation kinetics is studied for a multilayer Si(100 nm)/30Si(1 nm)/28Si(2 nm) specimen in a dry oxygen atmosphere at 1000 deg C for 60 s. The layers of 30Si and 28Si are successively grown on a silicon substrate by molecular beam epitaxy. The depth profiles of 30Si and 28Si are observed with spectroscopy of 400 keV He+ backscattering ions. It is found that a certain amount (about 20%) of 30Si atoms moves into a 28SiO2 layer during oxidation as it is predicted by the theory
Abstract (Russian)
Исследована кинетика окисления многослойного образца Si(100 нм)/30Si(1 нм)/28Si(2 нм) в атмосфере сухого кислорода при 1000 град С в течение 60 с. Слои 30Si и 28Si выращены на поверхности кремния методом молекулярно-лучевой эпитаксии. Распределение атомов 30Si и 28Si наблюдали с помощью спектроскопии резерфордовского рассеяния ионов Не+ с энергией 400 кэВ. Обнаружено, что определенное количество атомов 30Si (около 20%) перемещается за время окисления в слой 28SiO2, что согласуется с теоретическим прогнозомAdditional details
Additional titles
- Original title (English)
- Materialy XVII Mezhdunarodnoj konferentsii Vzaimodejstvie ionov s poverkhnost'yu (VIP-2005). Tom 1
Publishing Information
- Publisher
- Izd-vo MAI
- Imprint Place
- Moscow (Russian Federation)
- ISBN
- 5-7035-1560-2
- Imprint Title
- Book of reports of XVII International conference Ion-surface interactions ISI-2005. Vol. 1
- Imprint Pagination
- 600 p.
- Journal Page Range
- p. 190-193
Conference
- Title
- 17. International conference Ion-surface interactions ISI-2005
- Original Conference Title
- XVII Mezhdunarodnaya konferentsiya Vzaimodejstvie ionov s poverkhnost'yu (VIP-2005)
- Dates
- 25-29 Aug 2005
- Place
- Zvenigorod (Russian Federation)
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 38067506
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- DIFFUSION; ION SPECTROSCOPY; LAYERS; OXIDATION; OXYGEN; SEMICONDUCTOR JUNCTIONS; SILICON; SILICON 28; SILICON 30; TEMPERATURE RANGE 1000-4000 K; TRACER TECHNIQUES
- Descriptors DEC
- CHEMICAL REACTIONS; ELEMENTS; EVEN-EVEN NUCLEI; ISOTOPE APPLICATIONS; ISOTOPES; LIGHT NUCLEI; NONMETALS; NUCLEI; SEMIMETALS; SILICON ISOTOPES; SPECTROSCOPY; STABLE ISOTOPES; TEMPERATURE RANGE
Optional Information
- Notes
- 7 refs., 6 figs. Imprint:Materialy XVII Mezhdunarodnoj konferentsii Vzaimodejstvie ionov s poverkhnost'yu (VIP-2005). Tom 1