Published January 2006 | Version v1
Journal article Metadata-only

Asymmetric fingered TFT structure: a new architecture for Kink effect and off-current suppression and improved stability

Creators

  • 1. IFN-CNR, Rome (Italy)

Description

The asymmetric fingered structure for polysilicon thin-film transistors (AF-TFTs) is analysed in detail by combining experimental characteristics and two-dimensional numerical simulations. This structure allows an effective reduction of the kink effect and off-current, without introducing any additional series resistance. In addition, a substantial improvement in the device stability is also observed when compared to conventional TFT. The AF-TFT characteristics have been explained by considering a two transistor model.

Additional details

Publishing Information

Journal Title
Journal of the Korean Physical Society
Journal Volume
48
Journal Issue
91
Series
17 refs, 18 figs
Journal Page Range
p. S64-S71
ISSN
0374-4884

INIS

Country of Publication
Korea, Republic of
Country of Input or Organization
Korea, Republic of
INIS RN
42074634
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ANNEALING; COMPARATIVE EVALUATIONS; COMPUTERIZED SIMULATION; ELECTRICAL PROPERTIES; EXCIMER LASERS; LIGHT EMITTING DIODES; THIN FILMS; TRANSISTORS; TWO-DIMENSIONAL CALCULATIONS
Descriptors DEC
EVALUATION; FILMS; GAS LASERS; HEAT TREATMENTS; LASERS; PHYSICAL PROPERTIES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SIMULATION