Published April 1997
| Version v1
Miscellaneous
The influence of orientated deformation and thermo annealing to the radiation defects in p-silicon
Description
Short communication
Additional details
Additional titles
- Original title (Russian)
- Влияние ориентированной деформации и термоотжига на радиационные дефекты в п-кремнии
Publishing Information
- Imprint Title
- Abstracts of the international conference on actual problems of physics of semiconductor devices
- Imprint Pagination
- 131 p.
- Journal Page Range
- p. 97.
- Report number
- INIS-UZ--039
Conference
- Title
- International conference on actual problems of physics of semiconductor devices.
- Dates
- 24-26 Apr 1997.
- Place
- Tashkent (Uzbekistan).
INIS
- Country of Publication
- Uzbekistan
- Country of Input or Organization
- Uzbekistan
- INIS RN
- 28044551
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- ANNEALING; GAMMA RADIATION; PHYSICAL RADIATION EFFECTS; POINT DEFECTS; PRESSURE DEPENDENCE; SILICON
- Descriptors DEC
- CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELECTROMAGNETIC RADIATION; ELEMENTS; HEAT TREATMENTS; IONIZING RADIATIONS; RADIATION EFFECTS; RADIATIONS; SEMIMETALS
Optional Information
- Notes
- Imprint:Sbornik trudov mezhdunarodnoj konferentsii 'Aktual'nye problemy fiziki poluprovodnikovykh priborov'.