Published February 18, 2008
| Version v1
Journal article
Study of residual background carriers in midinfrared InAs/GaSb superlattices for uncooled detector operation
- 1. Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson Air Force Base, Ohio 45433 (United States)
Description
The midinfrared 7 ML InAs/8 ML GaSb superlattices (SLs) were grown by molecular beam epitaxy at growth temperatures between 370 and 430 deg. C in order to study the intrinsic characteristic of background carriers. Grown SLs were all residual p type with carrier densities in the low 1011 cm-2, and a minimum density of 1.8x1011 cm-2 was obtained from the SL grown at 400 deg. C. With increasing growth temperature, the in-plane carrier mobility decreased from 8740 to 1400 cm2/V s due to increased interfacial roughness, while the photoluminescence intensity increased sixfold due to a decrease in the nonradiative defect densities
Additional details
Identifiers
- DOI
- 10.1063/1.2884264;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 92
- Journal Issue
- 7
- Journal Page Range
- p. 071102-071102.3
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 39038562
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CARRIER DENSITY; CARRIER MOBILITY; CHARGE CARRIERS; CRYSTAL DEFECTS; CRYSTAL GROWTH; GALLIUM ANTIMONIDES; INDIUM ARSENIDES; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; ROUGHNESS; SEMICONDUCTOR MATERIALS; SUPERLATTICES
- Descriptors DEC
- ANTIMONIDES; ANTIMONY COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; EMISSION; EPITAXY; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LUMINESCENCE; MATERIALS; MOBILITY; PHOTON EMISSION; PNICTIDES; SURFACE PROPERTIES
Optional Information
- Notes
- (c) 2008 American Institute of Physics