Transport and electronic properties of DyRu2Si2 and ErRu2Si2 compounds

Results of the transport and electronic structure of DyRu2Si2 and ErRu2Si2 compounds are presented. These compounds crystallize in a tetragonal ThCr2Si2-type of structure. At high temperatures the resistivity varies linearly with temperature, whereas at low temperatures anomalies connected with the magnetic phase transitions are observed. The electronic structure and corresponding x-ray photoemission spectra (XPS) are presented. The band structure is calculated by the spin-polarized tight-binding linear muffin-tin orbital (TB LMTO) method. The XPS valence bands are compared with the calculated electronic density of states. In both compounds 4d states of Ru atoms form a band near to the Fermi level. (author)