Published March 2017
| Version v1
Journal article
Anomalous Hall effect in a diluted p-InAs〈Mn〉 magnetic semiconductor
- 1. Russian Academy of Sciences, Institute of Physics, Dagestan Scientific Center (Russian Federation)
Description
The dependences of the electrical resistivity and the Hall coefficient of single-crystal p-InAs〈Mn〉 bulk samples with an acceptor concentration of about 1018 cm–3 on uniform pressure P = 4–6 GPa at T = 300 K in the region of impurity conduction are quantitatively analyzed. The anomalous Hall effect is shown to occur in p-InAs〈Mn〉. Its contribution is negative and correlates with the deionization of acceptors and an increase in the magnetic susceptibility.
Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Experimental and Theoretical Physics
- Journal Volume
- 124
- Journal Issue
- 3
- Journal Page Range
- p. 493-495
- ISSN
- 1063-7761
- CODEN
- JTPHES
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 48063984
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CONCENTRATION RATIO; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; HALL EFFECT; IMPURITIES; INDIUM ARSENIDES; MAGNETIC SEMICONDUCTORS; MAGNETIC SUSCEPTIBILITY; MANGANESE ADDITIONS; MONOCRYSTALS; PRESSURE RANGE GIGA PA; P-TYPE CONDUCTORS
- Descriptors DEC
- ALLOYS; ARSENIC COMPOUNDS; ARSENIDES; CRYSTALS; DIMENSIONLESS NUMBERS; ELECTRICAL PROPERTIES; INDIUM COMPOUNDS; MAGNETIC PROPERTIES; MANGANESE ALLOYS; MATERIALS; PHYSICAL PROPERTIES; PNICTIDES; PRESSURE RANGE; SEMICONDUCTOR MATERIALS; TRANSITION ELEMENT ALLOYS
Optional Information
- Copyright
- Copyright (c) 2017 Pleiades Publishing, Inc.