Amorphous clusters associated with recoil oxygen created in As+ ion-implanted Si/SiO2 systems

The effects of recoil-implanted oxygen in Si on the electrical activation of As and the defect structure in the Si surface layer after through-oxide implantation have been investigated, using the electron spin resonance (ESR) method and transmission electron microscopy (TEM) observation. The ESR center with the g-value of 2.0052 was observed in (111) oriented Si even after a 10000C anneal. The origin of the ESR center is considered to be the anomalous residual damage center which is associated with recoil oxygen atoms from SiO2 films. The presence of these residual defects restricts the electrical activation of As. This is observed in the region where the oxygen concentration exceeds about 1020 O+/cm3. When 750 Angstroem of the surface layer is etched off, a large number of defects (g = 2.0052) disappear. (orig.)