Dependence of 1/f noise on defects induced in copper films by electron irradiation

When 500-keV electron irradiation was used to induce defects in polycrystalline copper films maintained at 90 K, the spectral density of the 1/f noise voltage across the films increased by as much as 1 order of magnitude, while the resistivity increased by at most 10%. When the films were annealed at progressively higher temperatures, both the 1/f noise and the resistivity were reduced; however, at lower annealing temperatures, the fractional reduction in the added noise was substantially more than that in the added resistivity