Experimental study on the collective theory of flux pinning in a high-field superconductor
Creators
- 1. Kernforschungszentrum Karlsruhe, Institut fuer Technische Physik and Universitaet Karlsruhe, Institut fuer Experimentelle Kernphysik, Postfach 3640, 7500 Karlsruhe, Federal Republic of Germany
Description
Homogenized V3Si crystals were irradiated with fast neutrons at conditions which result in a proportionality between the induced defect density and the neutron fluence. The critical current density is corrected for differences in the fluence dependence of the upper critical field and of the Ginzburg-Landau parameter. The resulting rise of the volume pinning force is investigated as a function of the density of the weak interacting defects. A second power law which points to a collective interaction is observed at low defect densities and at low fields. With increasing defect density and increasing field, this quadratic dependence vanishes abruptly and an almost linear relation dominates. The exponent of this first power law decreases continuously with further increase of field or defect density. These observations are compared with the collective pinning theory
Additional details
Publishing Information
- Journal Title
- Phys. Rev., B: Condens. Matter
- Journal Volume
- 31
- Journal Issue
- 1
- Series
- Phys. Rev., B: Condens. Matter.
- Journal Page Range
- 183-192
- ISSN
- 0163-1829
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 16053516
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Numerical Data
- Descriptors DEI
- CRITICAL CURRENT; CRITICAL FIELD; CRYSTAL DEFECTS; CRYSTALS; EXPERIMENTAL DATA; GINZBURG-LANDAU THEORY; IRRADIATION; MAGNETIC FLUX; NEUTRON FLUENCE; NEUTRONS; PENETRATION DEPTH; SUPERCONDUCTORS; VANADIUM SILICIDES
- Descriptors DEC
- BARYONS; CRYSTAL STRUCTURE; CURRENTS; DATA; ELECTRIC CURRENTS; ELEMENTARY PARTICLES; FERMIONS; HADRONS; INFORMATION; MAGNETIC FIELDS; NUCLEONS; NUMERICAL DATA; SILICIDES; SILICON COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; VANADIUM COMPOUNDS