Published July 14, 1982
| Version v1
Journal article
Measurements of the reflectivity of silicon carbide at 4.4nm
Creators
- 1. Imperial Coll. of Science and Technology, London (UK). Blackett Lab.
Description
Measurements are presented of the absolute value of the reflectivity at grazing incidence and 4.4nm of three polycrystalline forms of silicon carbide. (author)
Additional details
Publishing Information
- Journal Title
- J. Phys., D (London). Appl. Phys.
- Journal Volume
- 15
- Journal Issue
- 7
- Series
- J. Phys., D (London). Appl. Phys.
- Journal Page Range
- L71-L74
- ISSN
- 0022-3727
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 13707630
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Numerical Data
- Descriptors DEI
- ANGULAR DISTRIBUTION; EXPERIMENTAL DATA; POLYCRYSTALS; REFLECTION; SILICON CARBIDES; SOFT X RADIATION
- Descriptors DEC
- CARBIDES; CARBON COMPOUNDS; CRYSTALS; DATA; DISTRIBUTION; ELECTROMAGNETIC RADIATION; INFORMATION; IONIZING RADIATIONS; NUMERICAL DATA; RADIATIONS; SILICON COMPOUNDS; X RADIATION