A NEGF study of the effect of surface roughness on CMOS nanotransistors

Start The effect of surface roughness on the electron transport of a double gate nanotransistor has been studied. The study has been carried out using a two-dimensional nonequilibrium Green's function formalism coupled self-consistently with Poisson's equation. A novel discretisation scheme for Poisson and the Green's function equations has been implemented in order to describe properly the surface roughness. The two-dimensional electron and current density landscape for the device with surface roughness exhibit strong inhomogeneity as compare with the smooth case (non-surface roughness). The effects of the specific profile of the surface roughness do not self-average. The total macroscopic current pattern follows the microscopic detail of the roughness