On the nature of radiation resistance of compensated silicon

The calculation of the effect of quasi-chemical reactions in the Si silicon, compensated by small admixtures, on the radiation resistance characteristics is carried out. The cases with relatively low and high admixture concentration, sufficient for the dipole pairs formation, are considered. The conclusion is made that the potential relief inside the semiconductor, modulated by the isoelectron admixtures, effects the character of the quasi-chemical reactions, which provides for the possibility of controlling the defective composition and finally the type of the local electron levels spectrum type in the forbidden zone